Scaling limit

Results: 21



#Item
11[removed][removed]Modeling extreme nanoscale devices Slava V. Rotkin Multiscale simulations, including nonclassical effects, predict a fundamental scaling limit for micro-electromechanical systems.

[removed][removed]Modeling extreme nanoscale devices Slava V. Rotkin Multiscale simulations, including nonclassical effects, predict a fundamental scaling limit for micro-electromechanical systems.

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Source URL: spie.org

Language: English - Date: 2015-03-03 15:33:44
12Averaging principle for an order book model Ulrich Horst Michael Paulsen  Humboldt-Universit¨

Averaging principle for an order book model Ulrich Horst Michael Paulsen Humboldt-Universit¨

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Source URL: www.fields.utoronto.ca

Language: English - Date: 2010-06-19 15:15:48
13arXiv:cond-mat/9905305v1 [cond-mat.stat-mech] 20 May[removed]Scaling of the distribution of fluctuations of financial market indices Parameswaran Gopikrishnan1 , Vasiliki Plerou1,2 , Lu´ıs A. Nunes Amaral1 , Martin Meyer

arXiv:cond-mat/9905305v1 [cond-mat.stat-mech] 20 May[removed]Scaling of the distribution of fluctuations of financial market indices Parameswaran Gopikrishnan1 , Vasiliki Plerou1,2 , Lu´ıs A. Nunes Amaral1 , Martin Meyer

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Source URL: arxiv.org

Language: English - Date: 2008-02-01 04:54:26
14University of Warwick institutional repository: http://go.warwick.ac.uk/wrap This paper is made available online in accordance with publisher policies. Please scroll down to view the document itself. Please refer to the

University of Warwick institutional repository: http://go.warwick.ac.uk/wrap This paper is made available online in accordance with publisher policies. Please scroll down to view the document itself. Please refer to the

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Source URL: wrap.warwick.ac.uk

Language: English - Date: 2010-11-19 07:17:40
15Steep-Slope Tunnel Field-Effect Transistor (FET) using III-V Nanowire on Si Prof. Takashi FUKUI & Dr. Katsuhiro TOMIOKA (Hokkaido University) As the scaling of Si transistors is reaching its limit, they are expected to h

Steep-Slope Tunnel Field-Effect Transistor (FET) using III-V Nanowire on Si Prof. Takashi FUKUI & Dr. Katsuhiro TOMIOKA (Hokkaido University) As the scaling of Si transistors is reaching its limit, they are expected to h

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Source URL: www.jst.go.jp

Language: English - Date: 2013-11-20 21:23:43
16The dimension of loop-erased random walk in 3D

The dimension of loop-erased random walk in 3D

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Source URL: arxiv.org

Language: English - Date: 2010-10-10 20:25:33
17Scaling limits of anisotropic random growth models Amanda Turner

Scaling limits of anisotropic random growth models Amanda Turner

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Source URL: www.stats.ox.ac.uk

Language: English - Date: 2011-04-07 12:40:05
182011 Eisenbud Prize Herbert Spohn received the 2011 AMS Leonard Eisenbud Prize for Mathematics and Physics at the

2011 Eisenbud Prize Herbert Spohn received the 2011 AMS Leonard Eisenbud Prize for Mathematics and Physics at the

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Source URL: www.ams.org

Language: English - Date: 2011-03-15 10:49:33
19Sheffield Awarded 2011 Lo` eve Prize The 2011 Line and Michel Lo`eve International Prize in Probability is

Sheffield Awarded 2011 Lo` eve Prize The 2011 Line and Michel Lo`eve International Prize in Probability is

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Source URL: www.stat.berkeley.edu

Language: English - Date: 2011-10-26 14:40:47
20Programme BLANC Document scientifique associé

Programme BLANC Document scientifique associé

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Source URL: www.univ-orleans.fr

Language: English - Date: 2008-09-03 09:03:26